Characterization of CdxTeyOz/CdS/ZnO Heterostructures Synthesized by the SILAR Method

CdxTeyOz/CdS/ZnO heterostructures were obtained by the SILAR method using ionic electrolytes. A CdS film was formed as a buffer layer for better adhesion of cadmium-tellurium oxides to substrate surface. In turn, ZnO previously prepared electrochemical etching form rough textured addition, an annealing mode used in oxygen stream complete oxidation process heterostructure The resulting nanocomposite investigated RAMAN, XRD, SEM, and EDX methods. We assume that CdO TeO4 initially on surface later evolve into TeO2 TeO3 when saturated with oxygen. These oxides, are components ternary CdTeO3 CdTe3O8. It should be noted this mechanism has not been fully studied requires further research. However, results presented article make it possible systematize data experimental observations regarding formation films.